Newsgroups: sci.physics.plasma
From ned@langmuir.EECS.Berkeley.EDU Tue Apr 18 05:13:38 1995
From: Dan Flamm <dlf@langmuir.EECS.Berkeley.EDU>
Organization: University of California at Berkeley
Subject: 3rd Intl Plasma Tools Program

THIRD INTERNATIONAL WORKSHOP ON ADVANCED PLASMA TOOLS
Sources, Process Control & Diagnostics

May 3-4, 1995
LeBaron Hotel, San Jose, CA

SCHEDULE

May 3 7:30am-8:15am. Registration
8:30am-11:30am. Plasma Sources
11:00am-1:30pm Posters, Exhibition, Lunch
1:30pm-5:30pm Process Control & Diagnostics
5:30pm-7:00pm Exhibits, Wine&Cheese Party, Posters

May 4 8:30am-11:30am Processes & Manufacturability
11:00am-1:30pm Posters, Exhibition, Lunch
1:30pm-2:50pm Processes & Manufacturability
3:00pm-5:30pm Plasma Damage

@ Abstracts for a May 3 late news session (1-page) should be faxed to
(408)321-9078 or sent by email to latenews@pronto.pacbell.com.
Accepted until April 21, 1995.

Organizing Committee:
Daniel L. Flamm, U.C. Berkeley (Chair) Abid Khan, Invax Technologies
Neil Benjamin, Lam Research James P. McVittie, Stanford Univ.
Kristin Brigham, Silicon Video Corp. Randall Mundt, Lam Research
Calvin T. Gabriel, VLSI Technology Jeffrey Perry, National Semiconductor
Graham Hills, Applied Materials Steven Savas, Mattson Technology

===========================================================================
Registration Information: Send check for $165 ($50 student rate) to:
NCCAVS, 150 W. Iowa Ave., Suite 104, Sunnyvale, CA 94086 with form (at the
end of this flyer). Fee includes lunch on both days. Add $65 additional
for Proceedings volume. For additional information email:
workshop@pronto.pacbell.com or fax: (408)321-9078.
___________________________________________________________________________
Sponsored by the Plasma Etch Users Group and Northern California Chapter
of the American Vacuum Society in cooperation with SEMI.
___________________________________________________________________________

PRELIMINARY PROGRAM

@ PLASMA SOURCES
=================
@ N. Hershkowitz, R. Breun, J. Ding, C. Lai, A. Quick, J. Taylor, R.C.
Woods, K. Kirmse, J.Z. Wu, C. Yang, U. of Wisc-Madison, "Does It Matter
What Type of Source is Used for Plasma Etching of Semiconductors?"
(Invited Talk).
@ D. Fatke, Sematech, S. Rhoades, D. Hemker, Plasma & Materials Tech.,
"The Development of Silicon Etch Processes Using an M=0 Helicon
Source-Based Cluster Tool."
@ Joseph Cecci, University of New Mexico, "Spiral ICP Plasma Source
Operation in Low B-Field Regime."(Invited Talk).
@ J. F. Donohue, M. Kent, A. Sampson, LAM Research Corp., "A Geometrical
Focusing Technology Applied to SiO2 Etching"
@ P. Rummel, Comdel Corp., "Considerations in Designing RF Delivery
Systems for Plasma Processing Applications." (Invited Talk).
@ C.B. Zarowin, Hughes Aircraft Co., "The Basis of Macroscopic and
Microscopic Surface Shaping and Smoothing by Plasma Assisted Chemical
Etching"
@ D. W. Hewett, G. J. DiPeso, M. R. Gibbons, V. Vahedi, P. Vitello, R.
Stewart, J. J. Bardsley, Lawrence Livermore National Laboratories,
"Numerical Modelling of Plasma Physics and Chemistry in Semiconductor
Processing" (Invited Talk).
@ T. Bartel, J. E. Johannes, Sandia National Labs., D. P. Lymberopoulos,
R. S. Wise, D. J. Economou, U. of Houston, "Simulation of Low Pressure
Plasma Reactors using the Direct Simulation Monte Carlo (DSMC) Particle
Method"

POSTER TALKS
@ U. Kortshagen, I. Pukropski, Univ. Bochum, L. D. Tsendin, St. Petersburg
Tech. State Univ., "Fast Two-Dimensional KInetic Modeling of High Density
Low-Pressure Inductively Coupled Plasmas."
@ F. F. Chen, I. D. Sudit, D. D. Blackwell, M. Light, UCLA, "Equilibrium
Conditions in High-Density Helicon Discharges."
@ V. Vahedi, J. N. Bardsley, G. DiPeso, Lawrence Livermore National Lab,
"Simulations of a Capacitively Coupled Plasma Source with an Internal Grid."
@ J. Ogle, Seldon, "Fine Line and Large Area Plasma Sources"
@ A. V. Kasheev, Moscow State U., "Numerical Solution of the Electron
Distribution Function for ECR Heating in Magnetic Mirror"
@ V. V. Andreev and A. Umnov, Russian Friendship U., "Relativistic Plasma
and Electron Bunches in Plasma Synchrotrons GYRAC"
@ A. Balmashnov, Russian Friendship U., "CERA-V" The Microwave Plasma
Stream Source with Variable Ion Energy"
@ C. Chou, K. Saravanan, J. Kava, M. Siegel, Applied Materials,
"Characterization of a Simplified Gas Distribution for Wafer Cost
Reduction in Plasma Metal Etcher"

@ PROCESS CONTROL & DIAGNOSTICS
================================
@ J. Hosch, Texas Instruments, "Fault Detection, Classification, and
Advanced Process Control." (Invited Talk).
@ C. Cheng, K. V. Guinn, V. M. Donnelly, AT&T, I. P. Hermann, Columbia
University, "Plasma Etching of Si Studied by In-Situ Laser-Induced
Desorption and X-ray Photoelectron Spectroscopy"
@ A. Iturralde, "A Review of Sensing Technologies for Semiconductor
Process Applications."
@ J. Booth, B. T. Beard, Thermionics, J. E. Stevens, M. G. Blain, T. L.
Meisenheimer, Sandia National Lab, "An In-Situ, Noninvasive, Real Time
Temperature Monitoring System for Chemical Downstream Etching of Silicon
Wafers."
@ J. Park, S. Chung, J. Kim, W. S. Kim, LG Semicon Co., "XPS Analysis of
Oxide Etch Polymer in Inductively Coupled Plasma"
@ M. Watabe, R. Kurosaki, J. Kikuchi, H. Yano, Fujitsu, Ltd., "In-situ
Wafer Temperature Monitoring and Control Using Pulse-Modulated
Infrared-Laser Interferometric Thermometry for Low Pressure Single-Wafer
CVD System."
@ T. Benson, C. Hanish, P. Hanish, L. Kamlet, P. Klimecky, B. A. Rashap,
J. Grizzle, P. Kargonekar, F. Terry, Jr., , U. of Mich., B. Barney,
NVISION Instruments, "Sensors Systems for Real-Time Feedback Control of
Reactive-Ion Etching"
@ D. Greve, T. J. Knight, X. Cheng, B. H. Krogh, M. A. Gibson, Carnegie
Mellon U. and MKS Instruments, "Process Control Based on Quadrupole Mass
Spectrometry."
@ G. Jahns, PointOne Corp., D.Hemker & J. Napolitano, Plasma & Matls
Tech., Inc.,"Empirical Nonlinear Learning Approach to Real-Time Etch
Process Monitoring and Control."
@ B. E. E. Kastenmeler, P. J. Matsuo, J. J. Beulens, G. S. Oehrlein,
SUNY, Albany, T. Vo, L. C. Frees, Leybold Inficon, Inc.,
"Mass-Spectormetric Characterization of Chemical Downstream Etching
of Silicon-Nitride and Poly-Silicon Using CF4/O2/N2."
@ C. Spanos, U.C. Berkeley, "From Open Loop to Run-to-Run and Real-Time
Control For Plasma Processes."

POSTER TALKS
@ A. Hosokawa & M. Kowaka, Applied Komatsu Technol., "Economical Real-Time
Monitoring of Substrate Temperature Using a Non-Contact Thermocouple for
the Next-Generation Sputtering System."
@ R. Waits, UTI, "Process and Equipment Monitoring with an In-Situ
Quadrupole Mass Analyzer"
@ R. Breun, N. Hershkowitz, R. Stewart, J. Taylor, C. Woods, I. Abraham,
Y. Men, C. Yang, S. Bisgaard, R. Mau, Univ. Wisc-Madison, "Real Time
Control Plans on an MCICP"
@ R. Allen, R. Moore, M. Whelan, Verity Instruments, "An Application of
Neural Networks to Plasma Etch Endpoint Detection"
@ H. Engstrom, Tencor Instruments, "Reflectance Spectra of Plasma Etched
Silicon"
@ H. Litvak, Luxtron Corp., "Endpoint Control via Optical Emission
Spectroscopy (OES).

@ PROCESSES & MANUFACTURABILITY
================================
@ H. Shan, B. Pu, H. Gao, K. Ke, J. Lewis, M. Welch, C. Deshpandey,
Applied Materials, "Process Kit and Wafer Temperature Effects on
Dielectric Etch Rate and Uniformity of Electrostatic Chuck"
@ H. Shan, E. Lee, M. Welch, B. Pu, J. Carducci, K. Ke, H. Gao, P.
Luscher, G. Crean, R. Wang, R. Blume, J. Cooper, Applied Materials, "A
New Dielectric Etcher with Enabling Technology for High Productivity"
@ J. Spencer, B. S. Mercer, PlasmaQuest, D. B. Poker, Oak Ridge NatUl Lab,
"ECR-Enhanced Etching of Pt and Ferroelectric Thin Films" (Invited Talk).
@ T. Chau and K. Kao, U. of Manitoba, "Optical Emission Spectra of ECR
Microwave Oxygen Plasmas"
@ G. Smith, I. Highberg, Cypress Semiconductor, "How to Squeeze More
Control and Capabilities Out of Your Etcher"
@ P. Verdonck, R. D. Mansano, C. M. Hasenack, Univ. Sao Paulo, "
Contamination caused by RIE Plasmas and Subsequent Cleaning Procedures."
@ J. Gonzales, T. Fujinohara, J. Szettella, Sony Microelectronics, "An
Experimental Analysis of Cl2/BCl3 Gas Flows on Submicron Al-Cu Plasma
Etching."
@ R. Kraft, T. Boonstra, S. Krishnan, Plasma MatlUs Tech., J. McKee, Texas
Instruments, "Etching 0.35um Polysilicon Gates on a High-Density Helicon
Etch Tool."
@ S. K. Srivastava, J. W. McGowan Jet Propulsion Laboratory, K. C. Ray
Chiu, Electrochemical Tech. Corp., "Removal of Atomospheric Pollutants
in a Negative Ion Dominated Plasma."
@ J. Jenson, B. Lucas and R. A. Hendrickson, Brooks Automation, "A Simple
Way of Looking at Cluster Tool Throughput."
@ D. L. Flamm, J. Verboncouer, U. C. Berkeley, S. Yoneyama, MC Electronics
Corp., "Rate Data and Predictive Modeling of Uniformity for High
Throughput, Large Area Isotropic Stripping and Etching".

POSTER TALKS
@ Paul Werbaneth, Hitachi Ltd., " Reactor Evacuation Optimization In The
Hitachi M-500 Series."
@ R. Vail, Tegal Corp., "Post Metal Etch Corrosion Control Using
Integrated DI Water Rinse Prior to Photoresist Ashing."
@ J. Helmer, "Use of Analytic Models for Deposition by PVD"
@ L. Luo, M. Ben-Dor, Lam Research, "Implementation of a Bipolar
Electrostatic Chuck (ESC) on Inductively Coupled High Density Plasma
Etch System"
@ C. Cheng and J. Oncay, GaSonics Intl., "Applications of Downstream
Plasmas in Surface Residue Cleaning: Studies of O2/NF3 Chemistry"

@ PLASMA DAMAGE
================
@ Koichi Hashimoto, Fujitsu Ltd., "Oxide Damage in Uniform Plasmas from
Electron Shading" (Invited Talk).
@ T. Kinosita, M. Hane and J. P. McVittie, Stanford University, "Notching
as an Example of Charging in Uniform High Density Plasmas."
S. Ma and J. P. McVittie, Stanford University, "The Effect of Wafer
Temperature During Exposure on Charging Damage."
@ W. En, B. P. Lindler, N. Cheung, U.C. Berkeley, "Modeling of Plasma
Processing Effects using the SPICE Circuit Simulator."
@ T. Brozek, X. Li, Y. D. Chan, F. Preuninger, C. R. Viswanathan, UCLA
and SEMATECH, "Evaluation of Plasma Damage Using Fully Processed MOS
Transistors"
@ W. Lukaszek, Wafer Charging Monitors, Inc.,"CHARM-2: A
Passive Plasma Probe for Characterizing Wafer Charging in Ion and
Plasma-Based IC Processing Equipment"
@ K. Nauka, J. B. Kruger, W. W. Dixon, W. E. Greene, B. W. Langley,
Hewlett Packard Co., "Monitoring of Dielectric Charges Introduced
by Plasma Processing with Surface Photovoltage and Contact Potential
Difference Measurements"

POSTER TALKS
@ D. Parks, VLSI Tech., R. Bersin, Ulvac Tch., " Gate Oxide Damage During
Post Etch Ashing."
@ A. R. Forouhi, I. Bloomer, n&k Technology, "Optical Characterization of
Surface Damage Caused by Plasma Cleaning of Silicon Wafers"
@ T. Dao, SEMATECH, T. Brozek, C. R. Viswanathan, UCLA, "A Comparison of
Damage Created by Chemical Downstream Etcher and Plasma-Immersion System
in MOS Capacitors"

SPECIAL SESSION
@ R. D. Benjamin, G. Dipeso, P.O. Egan, G. J. Parker, R> A. Richardson &
P. Vitello, Lawrence Livermore Nat'l Lab., "Experiments and Modeling
with a Large-Area Inductively Coupled Plasma (ICP) Source."
@ Rod Hill, National Semiconductor Corp., "Characterization of a Low
Pressure, High Ion Density, Plasma Metal Etcher
_________________________________________________________________________
-------------------------------------------------------------------------
Enclose a check for $165 (student rate $50) payable to NCCAVS (please note
on your check "Plasma 5/95"). This fee includes lunch for both days but
does not include the Proceedings volume (available in July-August). Add
$65 to receive a copy of the Proceedings ($230 total, $115 students).
For registration questions, please call (408) 737-0767 or send email to
workshop@pronto.pacbell.com.

Name ________________________________________________________________
Company ________________________________________________________________
Address ________________________________________________________________
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City __________________________________________________________________
State, Zip, Country_____________________________________________________
Phone ______________________ Fax: _________________________________
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Mail to: NCCAVS, 150 W. Iowa Ave., Suite 104, Sunnyvale, CA 94086, USA
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